Nanostructure device and methods of forming the same

A method comprising:

• forming a first nanostructure stack adjacent a second nanostructure stack, wherein the first nanostructure stack and the second nanostructure stack comprise a plurality of first nanostructures and a plurality of second nanostructures, wherein a first sidewall of the first nanostructure stack is adjacent a second sidewall of the second nanostructure stack, wherein the first sidewall is perpendicularly offset from the second sidewall;
• replacing the first nanostructures of the first nanostructure stack and the first nanostructures of the second nanostructure stack with dielectric regions;
• replacing the dielectric regions of the first nanostructure stack and the dielectric regions of the second nanostructure stack with a continuous gate structure;
• and
• replacing a portion of the continuous gate structure with an isolation region, wherein the isolation region extends between the first nanostructure stack and the second nanostructure stack.

A device comprising:

• a first fin and a second fin over a semiconductor substrate, wherein the first fin has a first width and the second fin has a second width different from the first width;
• a plurality of first nanostructures over the first fin;
• a plurality of second nanostructures over the second fin;
• a first gate structure over the first fin, wherein the first gate structure separates respectively adjacent first nanostructures of the plurality of first nanostructures;
• and
• a second gate structure over the second fin, wherein the second gate structure separates respectively adjacent second nanostructures of the plurality of second nanostructures;
• and
• an isolation structure extending from the first fin to the second fin, wherein the isolation structure protrudes into the semiconductor substrate.