Semiconductor device

Abstract

Provided is a semiconductor device which is provided in a semiconductor substrate having a first principal surface and a second principal surface and containing a bulk dopant, the semiconductor device including: in the semiconductor substrate, a first low concentration region of a first conductivity type which has a carrier concentration lower than a bulk concentration that is a concentration of the bulk dopant; and a first high concentration region of the first conductivity type which has a first carrier concentration peak at a position in contact with the first low concentration region on a side of the first principal surface and has a carrier concentration higher than the bulk concentration, in which a hydrogen concentration peak is not provided at a position overlapping with the first carrier concentration peak.

Dependencies are inferred from the claim text.