Semiconductor devices with drain-source connection for avalanche breakdown
AssigneeWolfspeed, Inc.
InventorsRahul R. Potera, Sei-Hyung Ryu
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Abstract
A vertical junction field effect (JFET) semiconductor device according to some embodiments includes a drift layer, a channel layer on the drift layer, and a plurality of alternating trenches and mesas in the channel layer, wherein a first plurality of the trenches includes gate contact regions. A source metallization is on the mesas. The device includes a second different than the first plurality of trenches, wherein the source metallization is electrically connected to the drift layer at a bottom of the second trench.
Claims22
A vertical junction field effect (JFET) semiconductor device, comprising:
- a drift layer;
- a channel layer on the drift layer;
- a plurality of alternating trenches and mesas in the channel layer, wherein a first plurality of the trenches comprises gate contact regions;
- a source metallization on the mesas;
- and
- a second trench different than the first plurality of trenches, wherein the source metallization is electrically connected to the drift layer at a bottom of the second trench.
A vertical junction field effect (JFET) semiconductor device, comprising:
- a drift layer;
- a channel layer on the drift layer;
- a plurality of alternating trenches and mesas in the channel layer, wherein a first plurality of the trenches comprise gate contact regions;
- and
- a source metallization on the plurality of alternating trenches and mesas;
- wherein the source metallization is electrically connected to the drift layer at a bottom of a second trench that is different from the first plurality of trenches.
A vertical junction field effect (JFET) semiconductor device, comprising:
- a drift layer;
- a channel layer on the drift layer;
- and
- a plurality of alternating trenches and mesas in the channel layer within an active region of the device, wherein the plurality of trenches comprise a first plurality of the trenches having a first depth and a second plurality of trenches in having a second depth that is greater than the first depth.
A method of forming vertical junction field effect (JFET) semiconductor device, comprising:
- providing a drift layer;
- forming a channel layer on the drift layer;
- and
- forming a plurality of alternating trenches and mesas in the channel layer within an active region of the device, wherein the plurality of trenches comprise a first plurality of the trenches having a first depth and a second plurality of trenches having a second depth that is greater than the first depth.
Dependencies are inferred from the claim text.