Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode;
• a third electrode;
• a fourth electrode, a second direction from the third electrode to the fourth electrode crossing a first direction from the first electrode to the second electrode;
• a first terminal electrically connected to the third electrode;
• a second terminal electrically connected to the fourth electrode;
• a semiconductor member;
• and
• a first insulating member,
• at least a part of the semiconductor member being between the first electrode and the second electrode in the first direction,
• the semiconductor member including:
• a first semiconductor region of a first conductivity type,
• a second semiconductor region of a second conductivity type,
• a third semiconductor region of the first conductivity type,
• a fourth semiconductor region of the second conductivity type, and
• a fifth semiconductor region of the second conductivity type,
• the fourth semiconductor region being between the first electrode and the first semiconductor region in the first direction,
• the second semiconductor region being between the first semiconductor region and the second electrode in the first direction,
• the first semiconductor region including a first partial region, a second partial region, a third partial region, and a fourth partial region,
• the first partial region being between the first electrode and the third electrode in the first direction,
• a direction from the third electrode to the second partial region being along the second direction,
• a direction from the third electrode to the second semiconductor region being along the second direction,
• a direction from the third electrode to the third semiconductor region being along the second direction,
• at least a part of the second semiconductor region being between the first semiconductor region and the third semiconductor region in the first direction,
• the fifth semiconductor region being between the first partial region and the third electrode in the first direction,
• the third partial region being between the first electrode and the fourth electrode in the first direction,
• the direction from the fourth electrode to the fourth partial region being along the second direction,
• the direction from the fourth electrode to the second semiconductor region being along the second direction,
• the first insulating member including a first insulating region and a second insulating region,
• the first insulating region being between the third electrode and the semiconductor member, and
• the second insulating region being between the fourth electrode and the semiconductor member.