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US 2026/0075853 A1Published application
Breakdown diodes and methods of making the same
OwnerAlexei Sadovnikov, Natalia Lavrovskaya +1inventors
InventorsAlexei Sadovnikov, Natalia Lavrovskaya, Archana Venugopal
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Abstract
Breakdown diodes and methods of making the same are described. Such a breakdown diode can be fabricated in a semiconductor substrate and have a junction configured to breakdown under a target reverse bias applied across the junctions. The junction is located below the surface of the substrate by a distance suitable for ameliorating mechanical stress impact to the reverse bias breakdown voltage of the junction. Moreover, the junction is located away from an interface causing noise issues.
Claims21
A method, comprising:
- forming a deep n-well in a substrate with a surface, the deep n-well surrounding a p-doped region of the substrate;
- and
- forming a p-Zener portion of the p-doped region, wherein the p-Zener portion and the deep n-well forms a pn junction configured to breakdown under a target reverse bias across the pn junction.
A method, comprising:
- forming a mask defining an orifice over a substrate with a surface;
- adding p-type dopants in the substrate through the orifice, wherein the p-type dopants has a peak concentration at a first distance from the surface;
- adding n-type dopants in the substrate through the orifice, wherein the n-type dopants has a peak concentration at a second distance from the surface less than the first distance;
- and
- applying thermal energy to the substrate including the p-type and n-type dopants.
2 more elements
Dependencies are inferred from the claim text.