Ferroelectric memory device and method of forming the same

A device, comprising:

• a multi-layer stack, disposed on a substrate and comprising a plurality of conductive layers and a plurality of dielectric layers stacked alternately;
• at least one isolation pillar, disposed on the substrate and penetrating through the multi-layer stack;
• a channel layer, disposed between the multi-layer stack and the isolation pillar and comprising a plurality of channel segments corresponding to the conductive layers, respectively;
• a ferroelectric layer, disposed between the channel layer and the multi-layer stack;
• and
• at least two conductive pillars disposed on the substrate and penetrating through the multi-layer stack, wherein the at least two conductive pillars are disposed at two ends of the at least one isolation pillar,
• wherein the ferroelectric layer and the channel layer are in contact with the conductive pillars.

A method of forming a device, comprising:

• forming a multi-layer stack on a substrate, wherein the multi-layer stack comprises a plurality of dielectric layers and a plurality of conductive layers stacked alternately and has a trench penetrating therethrough;
• recessing the plurality of conductive layers exposed by a sidewall of the trench and therefore forming a plurality of recesses, wherein one of the plurality of recesses is formed between two adjacent dielectric layers;
• forming a ferroelectric layer on the sidewall of the trench and filling in the recesses;
• and
• forming a channel layer on the ferroelectric layer and filling in the recesses.