Semiconductor structure

A semiconductor structure, comprising:

• a first memory cell array, the first memory cell array comprising a plurality of rows of first word lines extending in a first direction, and the
• first word lines being isolated from each other;
• a first interconnection region comprising a plurality of first conductive lines extending in the first direction, each of the first conductive lines being provided in correspondence with and connected to
• each of the first word lines in odd-numbered rows or even-numbered rows;
• a first conductive contact combination, the first conductive contact combination being disposed in the first interconnection region, the first conductive contact
• combination comprising a plurality of first conductive contacts, each of the first conductive contacts being provided in correspondence with each of the first conductive lines, and each of the first conductive contacts extending in a second direction and being connected to each of the first conductive lines;
• and
• a second interconnection region, the second interconnection region being disposed adjacent to the first memory cell array and the first interconnection region in the first direction, a second conductive contact combination being provided in the second interconnection region, the second conductive contact combination comprising a plurality of second conductive contacts, and each of the second conductive contacts being provided in correspondence with and isolated from each of the first conductive contacts;
• and
• a plurality of first contact pads being provided in the second interconnection region, each of the second conductive contacts extending in the second direction and being connected to each of the first contact pads, wherein there is a minimum distance D0 between adjacent first conductive contacts in the first direction, there is a minimum distance D1 between adjacent second conductive contacts in the first direction, and the minimum distance D0 is less than the minimum distance D1;
• and in the second direction, each of the first conductive contacts has a minimum length L0, each of the second conductive contacts has a minimum length L1, and the minimum length L0 is less than the minimum length L1.