Vertical-cavity surface-emitting laser, laser array and light-emitting device

A vertical-cavity surface-emitting laser (VCSEL), comprising an N-type substrate, an upper distributed Bragg reflector (DBR), an N-type buffer layer, a first tunnel junction, a P-type DBR, an active layer, a second tunnel junction, a P-type metal contact layer, and a cathode electrode;

• wherein
• the N-type buffer layer, the first tunnel junction, the P-type DBR, the active layer, the second tunnel junction, the P-type metal contact layer, and the cathode electrode are stacked sequentially along a direction perpendicular to a front side of the N-type substrate and arranged on the front side of the N-type substrate;
• the first tunnel junction is configured to reverse carriers in the N-type buffer layer to carriers of opposite conductivity type;
• the second tunnel junction is configured to reverse carriers in the upper DBR to carriers of opposite conductivity type;
• the upper DBR is positioned between the active layer and the P-type metal contact layer and associated with the second tunnel junction;
• and
• an anode electrode is arranged on a back side of the N-type substrate away from the N-type buffer layer.