Plasma processing apparatus and plasma processing method

A plasma processing apparatus comprising:

• a chamber;
• a substrate support disposed in the chamber and configured to support a substrate including a silicon-containing film;
• a gas supply configured to supply a first process gas including a hydrogen fluoride gas into the chamber;
• a plasma generator configured to generate a first plasma from the first process gas;
• and
• a circuitry configured to supply a second process gas including a phosphorus-containing gas into the chamber,
• the plasma generator is configured to generate a second plasma from the second process gas, and
• the circuitry is configured to execute a process including:
• (a) providing the substrate on the substrate support, the substrate having a mask provided on the silicon-containing film,
• (b) generating the first plasma from the first process gas using the plasma generator to etch the silicon-containing film, and
• (c) before (b), generating the second plasma from the second process gas using the plasma generator to coat a surface of at least one of the chamber or an internal member disposed in the chamber with a phosphorus-containing film.

A plasma processing apparatus comprising:

• a chamber;
• a substrate support disposed in the chamber and configured to support a substrate including a silicon-containing film;
• a gas supply configured to supply a process gas into the chamber;
• a plasma generator configured to generate a plasma from the process gas;
• and
• a circuitry configured to execute a process including
• (a) providing the substrate on the substrate support, the substrate having a mask provided on the silicon-containing film, and
• (b) generating the plasma from the process gas using the plasma generator to etch the silicon-containing film with a hydrogen fluoride etchant contained in the plasma, and
• at least one of the chamber or an internal member disposed in the chamber includes an adsorption control substance controlling adsorption of the hydrogen fluoride etchant to the silicon-containing film.

A plasma processing method comprising:

• (a) providing a substrate in a chamber, the substrate having a silicon-containing film and a mask provided on the silicon-containing film;
• and
• (b) generating a plasma from a process gas containing hydrogen fluoride to etch the silicon-containing film,
• wherein in (a) and (b), at least one of the chamber or an internal member disposed in the chamber contains phosphorus.