Plasma processing apparatus

A plasma processing apparatus comprising:

• a stage on which a target object is to be placed;
• a chamber that houses the stage and that has an opening;
• a dielectric member that closes the opening;
• an induction coil that is provided on a side of the dielectric member opposite the stage and that generates plasma for processing the target object by application of high-frequency power;
• an electric heater that is provided between the dielectric member and the induction coil and that heats the dielectric member;
• and
• a power source section that applies a voltage to the electric heater,
• wherein the dielectric member has a first region and a second region surrounding the first region,
• the electric heater includes:
• a first heater that heats the first region;
• a second heater that heats the second region;
• and
• a joint that connects the first heater and the second heater,
• the first heater includes a first resistor having a first end and a second end,
• the second heater includes a second resistor having a third end and a fourth end,
• the first resistor extends in a specific direction from the first end to the second end along a first locus corresponding to the first region, the specific direction being one of circumferential directions,
• the second resistor extends in the specific direction from the third end to the fourth end along a second locus corresponding to the second region,
• the joint connects the first end and the third end, and
• the power source section applies the voltage between the second end and the fourth end.