Semiconductor device including repair storage

A semiconductor device, comprising:

• a first semiconductor die including a plurality of first repair registers having a volatile memory, a plurality of first memory blocks, and a plurality of first pads;
• and
• a second semiconductor die including a second repair registers having a volatile memory, a repair storage having a non-volatile memory, a plurality of second memory blocks, and a plurality of second pads connected the plurality of first pads, and stack with the first semiconductor die;
• wherein the repair storage outputs first pieces of repair information for repair operation of a first target memory block determined as a failure among the plurality of first memory blocks, by at least one first pad among the plurality of first pads and at least one second pad among the plurality of second pads, and
• wherein the first pieces of repair information are stored in a first target repair register, among the plurality of first repair registers, connected to the first target memory block, while the first target memory block performs the repair operation to replace a bad cell with a redundancy cell.

A semiconductor device, comprising:

• a plurality of semiconductor dies packaged as the semiconductor device,
• wherein each of the plurality of semiconductor dies includes a plurality of memory blocks configured to store data received from an external semiconductor device, and a plurality of repair registers connected to the plurality of memory blocks,
• wherein each of the plurality of repair registers includes a plurality of flip-flops, and
• wherein at least one semiconductor die among the plurality of semiconductor dies further includes a repair storage in which memory elements with non-volatile characteristics are disposed, and repair information stored in the repair storage is loaded into the plurality of repair registers when a power voltage is supplied to the plurality of semiconductor dies.