Enable open sub-block erase in sub-block mode operation
AssigneeSanDisk Technologies LLC
InventorsWeiyi Li, Jiacen Guo, Xiang Yang
Life of this patent
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AssigneeSanDisk Technologies LLC
InventorsWeiyi Li, Jiacen Guo, Xiang Yang
Estimating the term…
A memory apparatus and operating method are provided. The apparatus includes memory cells connected to word lines and configured to retain a threshold voltage corresponding to data states. The memory cells form a block including an unselected sub-block for an erase operation and a selected sub-block for the erase operation. A control means is configured to identify ones of the word lines of the unselected sub-block that are programmed. The control means applies a selected erase enable voltage to ones of the word lines of the selected sub-block while applying an unselected erase enable voltage to ones word lines of the unselected sub-block to erase the memory cells of the selected sub-block during the erase operation. The unselected erase enable voltage is different for ones of the word lines of the unselected sub-block that are programmed than for ones of the word lines of the unselected sub-block that are erased.
A memory apparatus, comprising:
A controller in communication with a memory apparatus including memory cells each connected to one of a plurality of word lines and configured to retain a threshold voltage corresponding to one of a plurality of data states, the memory cells form a block including an unselected sub-block for an erase operation and a selected sub-block for the erase operation, the controller configured to:
A method of operating a memory apparatus including memory cells each connected to one of a plurality of word lines and configured to retain a threshold voltage corresponding to one of a plurality of data states, the memory cells form a block including an unselected sub-block for an erase operation and a selected sub-block for the erase operation, the method comprising the steps of:
Dependencies are inferred from the claim text.