Photon-assisted chemical etching of silicon carbide films from reaction chamber parts

A method for etching a silicon carbide film from one or more parts of a reaction chamber of a reactor for deposition of one or more silicon carbide layers on a substrate, wherein the reactor comprises at least one light source adapted to emit light in a 310-370 nm range, said method comprising the steps of:

• (i) providing a silicon carbide film on said one or more parts of the reaction chamber, said silicon carbide film comprising silicon carbide in polycrystalline and/or amorphous form;
• and
• (ii) executing at least one cycle of an etching process comprising the steps of:
• A. ramping the reaction chamber to preset etching process conditions;
• and
• B. etching the silicon carbide film;
• wherein step A comprises sub-steps of:
• A1. ramping of the reaction chamber to a temperature of 800-1450 °C.;
• and
• A2. ramping the reaction chamber to a pressure of 100-1000 mbar;
• wherein step B comprises a sub-step of:
• B1. exposing a first reactive composition to the at least one light source;
• and
• B2. delivering the first reactive composition into the reaction chamber, the first reactive composition comprising one or more reactive gases and a carrier gas;
• wherein the one or more reactive gases comprise at least a first reactive gas;
• wherein said first reactive gas is a halogen or halogen compound;
• and
• wherein a molar concentration of the first reactive gas into the carrier gas is 15-40%.