Method for manufacturing semiconductor device and semiconductor device

A semiconductor device comprising:

• a semiconductor layer including a first main surface and a second main surface;
• a first electrode provided on the first main surface;
• a second electrode provided on the second main surface;
• a first semiconductor region of a first conductivity type provided in the semiconductor layer;
• a second semiconductor region of a second conductivity type provided in the semiconductor layer and located on the first semiconductor region;
• a control electrode provided so as to face the second semiconductor region with an insulating region interposed therebetween;
• a third semiconductor region of the first conductivity type provided in the semiconductor layer, located on the second semiconductor region, and electrically connected to the second electrode;
• a fourth semiconductor region of the second conductivity type provided in the semiconductor layer, located between the first electrode and the first semiconductor region, and electrically connected to the first electrode, in which an impurity concentration of the second conductivity type is a first concentration;
• and
• a fifth semiconductor region of the second conductivity type provided in an outer peripheral region extending from a side portion of the semiconductor layer to an inside of the semiconductor layer and electrically connected to the first electrode, the fifth semiconductor region including an impurity of the first conductivity type and an impurity of the second conductivity type, in which an impurity concentration of the second conductivity type is the first concentration, and a net impurity concentration of the second conductivity type after the impurity of the first conductivity type and the impurity of the second conductivity type compensate each other is a second concentration lower than the first concentration.