Module with high peak bandwidth i/o channels

A high peak bandwidth 11/O channel embedded within a multilayer surface interface that forms the bus circuitry electrically interfacing the output or input port on a first semiconductor die with the input or output port on a second semiconductor die, wherein the high peak bandwidth I/O channel comprises:

• vias in electrical communication with the input and output ports on the first and second semiconductor die,
• a channel link comprising conductive means embedded within low permittivity/ultra-low loss dielectric that electrically interconnects the vias,
• a passive network filtering circuit comprising capacitive, inductive, and resistive elements embedded within the high peak bandwidth I/O channel,
• a multilayer surface interface comprising the channel link embedded within a data signal plane,
• additional conductive means to form power planes and ground planes, or optional signal control planes;
• wherein,
• the passive network filtering circuit comprises components consisting of high energy density electroceramic dielectric that polarizes and depolarizes with femto-second response times,
• and, furthermore,
• multilayer surface interface is fanned on a dielectric substrate or semiconducting die, a semiconductor carrier, or an interposer circuit embedded within a stacked assembly of semiconductor chips, the stacked assembly of semiconductor chips is mounted on a substrate or semiconductor carrier, preferably a substrate or semiconducting carrier comprising a high peak bandwidth I/O channel, the passive network filtering circuit functions as a termination circuit, the passive network filtering circuit functions as an equalization circuit,
• wherein,
• the equalization circuit functions in Pre-Emphasis mode, Post-Emphasis mode, or both Pre-Emphasis and Post-Emphasis modes,
• and,
• the passive network filtering circuit functions as a frequency resonance circuit wherein active switching elements are embedded within an active semiconductor surface of a semiconductor chip carrier, a semiconductor die mounted on the semiconductor chip carrier, or semiconductor embedded within the stacked assembly of semiconductor chips form an electrical interface with a signal control plane in the multilayer surface interface and the passive network filtering circuit functions as a clock or data recovery circuit,
• and further,
• conductive means that forms the channel link within a data signal plane is configured as a differential pair, a resonant gate transistor is:
• embedded within an active semiconductor surface of a multilayer surface interface formed on a semiconductor chip carrier, a semiconductor die, or an active semiconductor interposer circuit,
• in electrical communication with the signal control plane of the multilayer surface interface,
• and,
• inserted between input and output vias within the high-peak bandwidth I/O channel to amplify an attenuated signal along with inductors, capacitors, and resistors embedded within the transistor's gate electrode function as band tuning elements to tailor amplification of the attenuated signal,
• wherein the amplification is tailored to provide maximal amplification at a desired resonant frequency or a selection of resonant frequencies,
• and further,
• the high-peak bandwidth I/O channel additionally comprises conductive means configured as a differential pair and switches that configure the resonant gate transistor to operate as a bi-directional amplification stage wherein the low permittivity, ultra-low loss dielectric comprises amorphous silica and the high energy density electroceramic dielectric of a capacitive circuit element comprises:
• a crystalline lattice wherein its unit cell with a median atomic mass greater than 25 amu, preferably greater than 70 amu, that has a relative permittivity εR above 70, preferably a relative permeability in the range of 200≤εR≤800,
• wherein,
• the high energy density electroceramic dielectric has stoichiometry given by:
• where, Zr is zirconium, Hf is hafnium, Ti is titanium, O is oxygen, and M(I), M(II), M(III), M(IV) are additional metal oxide components that form a thermodynamically stable perovskite crystal and x, y, and z, are fractional molar percentages forming ratios such that the sum of all M(I), M(II), M(III), M(IV) elemental components satisfies the constraint:
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• where the additional metal oxide components (M(I), M(II), M(III), M(IV)) comprise scandium (Sc), vanadium (V), chromium (Cr), manganese (Mn), zinc (Zn), niobium (Nb), molybdenum (Mo), tantalum (Ta), tungsten (W), lanthanum (La), cerium (Ce), praseodymium (Pr) neodymium (Nd), samarium (Sm), europium (Eu), terbium (Tb), dysprosium (Dy), holmium (Ho), ytterbium (Yb), indium (In), tin (Sn), lead (Pb) or bismuth (Bi),
• and,
• the capacitive circuit element has maximal physical dimension not greater than 10 s of micron, preferably not greater than 1 s of micron, and more preferably less than 1 micron.

A circuit module comprising a high peak bandwidth I/O channel formed upon a substrate upon which semiconductor die are attached, wherein the high peak bandwidth I/O channel comprises a multilayer surface interface that further comprises:

• conducting means that forms a channel link within a data signal plane that electrically interfaces signal transmission between the vias that form an electrical connection with input/output ports of semiconductor die mounted upon the substrate;
• low permittivity/ultra-low loss dielectric that envelopes the channel link;
• additional conductive means to form power planes and ground planes that separate,
• and,
• a passive network filtering circuit comprising capacitive, inductive, and resistive elements embedded within the high peak bandwidth i/O channel,
• wherein,
• the passive network filtering circuit elements further comprises high energy density electroceramic dielectric that polarizes and depolarizes with femto-second response times,
• and wherein, the substrate is a semiconductor or a semiconductor carrier.

A resonant gate transistor module that comprises a resonant gate transistor embedded within a first region of an active semiconductor surface on a semiconducting substrate that is in electrical communication with a multilayer surface interface comprising high-peak bandwidth I/O channels, wherein:

• one or more inductive elements are electrically inserted within the transistor's gate electrode;
• the gate electrode has elongated gate width having physical dimension that exceeds the gate length by ≥50×, preferably ≥1,000×, and most preferably exceeds the gate length by 500,000× such that the large gate capacitance and elongated gate width reduces the transistor's On-Resistance to negligible values;
• the inductance of the inductive elements causes the large capacitance to resonate at pre-determined frequencies thereby allowing the gate to switch or amplify large currents with high power efficiency at pre-determined resonant frequencies;
• and,
• the high-peak bandwidth I/O channels further comprise low permittivity, ultra-low loss dielectric and high energy density electroceramic dielectric that polarizes and depolarizes with femto-second response times,
• and, further comprises singly or in combination with any of the following:
• one or more inductive and other passive circuit elements that are electrically insulated within the transistor's gate electrode to form a passive filtering network that causes the transistor gate transistor to resonate and amplify or switch signals over a band of pre-determined frequencies,
• one or more inductive elements that are electrically inserted within the transistor's gate electrode to form a passive filtering network that causes the transistor gate to resonate
• and amplify or switch signals of at pre-determined frequencies or over a band of pre-determined frequencies,
• one or more inductive and other passive elements that are electrically inserted within the transistor's gate electrode to form a passive filtering network that causes the transistor gate to resonate and amplify or switch signals of at pre-determined frequencies or over a band of pre-determined frequencies,
• one or more inductive and other passive circuit elements that are embedded within the gate electrode and located within the first region of the active semiconductor surface,
• one or more inductive elements that are embedded within the multilayer surface interface of a high-peak bandwidth I/O channel and electrically inserted into the gate electrode by means of a via,
• one or more inductive and other passive circuit elements that are embedded within the multilayer surface interface of a high-peak bandwidth I/O channel and electrically inserted into the gate electrode by means of a via,
• a via comprising one or more passive circuit elements that are embedded within a circuit module in electrical communication to the resonant gate transistor electrode,
• a plurality of passive filtering networks that are integrated within signal data planes or vias in a high-peak bandwidth I/O channel and an active switching element embedded within the active semiconductor surface that is used to select which filtering function is used as the resonant response of the resonant gate transistor,
• one or more resonant gate transistors embedded within a first region of the active semiconductor surface and each forms an electrical interface with another resonant gate transistor in a second region of the active semiconductor surface through the high-peak bandwidth I/O channel
• wherein, the resonant gate circuit module comprised a fully integrated gyrator, further comprising the active circuitry of an Op-Arp and inverting passive circuitry,
• wherein, the fully integrated gyrator is electrically inserted within the gate electrode of the resonant gate transistor,
• wherein, the gyrator's inverting passive circuit is a capacitor, preferably a capacitor,
• wherein, the fully integrated gyrator's inverting passive circuit comprises a complex passive filtering network,
• wherein, the fully integrated gyrator functions as an amplifying equalization circuit,
• wherein, the active Op-Amp circuitry for the fully integrated gyrator is co-located with the active circuitry resonant gate transistor in a first region of the active semiconductor surface and the inverting passive circuitry for the fully integrated gyrator is located in multilayer surface interface of the high peak bandwidth I/O channel,
• wherein, the inverting passive circuitry comprises planar passive circuit components,
• wherein, the inverting passive circuitry comprises fully integrated vias,
• wherein, the active circuitry for the resonant gate transistor is located in a first region of the active semiconductor surface and the active Op-Amp circuitry for the fully integrated gyrator is located in a second region of the active semiconductor surface and the inverting passive circuitry is located within a multilayer surface interface that forms an electrical interface between the resonant gate transistor and the fully integrated gyrator through a high-peak bandwidth I/O channel,
• wherein, the second region of the active semiconductor surface is integrated on a second semiconductor device that is bonded to the multilayer surface interface formed on a semiconductor substrate that comprises the first region of the active semiconductor surface such that the first region of the active semiconductor surface on the semiconductor substrate forms an electrical interface to the second region of the active semiconductor surface is integrated on a second semiconductor device through a high-peak bandwidth I/O channel,
• wherein, the second region of the active semiconductor surface integrated on a second semiconductor device is in vertical alignment with the first region of the active semiconductor surface on the semiconductor substrate,
• wherein, the resonant gate transistor module comprises low permittivity, ultra-low loss dielectric comprises amorphous silica,
• wherein the resonant gate transistor module comprises high energy density electroceramic dielectric of a capacitive circuit element further comprising a crystalline lattice wherein its unit cell with a median atomic mass greater than 25 amu, preferably greater than 70 amu
• wherein the high energy density electroceramic dielectric of a capacitive circuit element has a relative permittivity εR above 70, preferably a relative permeability in the range of 200≤εR≤800 and has stoichiometry given by:
• wherein, Zr is zirconium, Hf is hafnium, Ti is titanium, O is oxygen, and M(I), M(II), M(III), M(IV) are additional metal oxide components that form a thermodynamically stable perovskite crystal and x, y, and z, are fractional molar percentages forming ratios such that the sum of all M(I), M(II), M(III), M(IV) elemental components satisfies the constraint:
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• such that the additional metal oxide components (N), M(I), M(II), M(III), M(IV) comprise, singly or in any combination, scandium (Sc), vanadium (V), chromium (Cr), manganese (Mn), zinc (Zn), niobium (Nb), molybdenum (Mo), tantalum (Ta), tungsten (W), lanthanum (La), cerium (Ce), praseodymium (Pr) neodymium (Nd), samarium (Sm), europium (Eu), terbium (Tb), dysprosium (Dy), holmium (Ho), ytterbium (Yb), indium (In), tin (Sri), lead (Pb) or bismuth (Bi),
• wherein the capacitive circuit element has physical dimension less than 1/20th of the guided wavelength of an operating frequency in excess of 3 GHz,
• preferably in excess of 300 GHz, and most preferably in excess of 1 THz, wherein the capacitive circuit element has maximal physical dimension not greater than 10 s of micron, preferably not greater than Is of micron, and more preferably less than 1 micron,
• wherein the high energy density electroceramic dielectric of an inductive element comprises a garnet having relative magnetic permeability μR≥10 and loss tangent tan δ≤10−3 at GHz. frequencies,
• wherein the garnet adopts either rhombic dodecahedron or trapezohedron crystal structures, or a combination of the two, and has the following chemical formula
• and the Group A metal oxides have equal molar concentration to silicon oxide and group B metal oxides have molar concentration that is % the molar concentration of silicon oxide;
• with preferred group A metal oxides include:
• calcium oxide (CaO), magnesium oxide (MgO), iron oxide (FeO), and manganese oxide (MnO), and, preferred group B metal oxides include:
• aluminum oxide (Al2O3), iron oxide (Fe2O3), chromium oxide (Cr2O3), vanadium oxide (V2O3), zirconium oxide (ZrO2), titanium oxide (TiO2), silicon oxide (SiO2), yttrium oxide (Y2O3), cobalt oxide ((Co3O4), gadolinium oxide (Gd2O3) neodymium oxide (Nd2O3) and holmium oxide (Ho2O3).
• wherein the high energy density electroceramic dielectric has controlled microstructure with uniform grain size ranging from 10 nm to 25 μm, preferably from 250 nm to 5 μm.

A bonded pair of semiconductor circuit modules each comprising a resonant gate transistor embedded within an active semiconductor surface on each semiconductor module that is in electrical communication with a multilayer surface interface comprising high-peak bandwidth I/O channels, wherein:

• one or more inductive elements are electrically inserted within the transistors' gate electrodes;
• the gate electrodes have elongated gate width having physical dimension that exceeds the gate length by ≥50×, preferably ≥1,000×, and most preferably exceeds the gate length by 500,000× such that the large gate capacitance and elongated gate widths reduce the transistors' On-Resistance to negligible values;
• the inductance of the inductive elements causes the large capacitance to resonate at pre-determined frequencies thereby allowing the gate to switch or amplify large currents with high power efficiency at pre-determined resonant frequencies;
• the high-peak bandwidth I/O channels further comprise low permittivity, ultra-low loss dielectric and high energy density electroceramic dielectric that polarizes and depolarizes with femto-second response times;
• the high peak bandwidth channels further comprise passive filtering networks are embedded on signal data planes or in fully integrated vias within the multilayer surface interface of each semiconductor circuit module forming the bonded pair;
• an active interfacial circuit layer is located at the bonding interface, which comprises active Op-Amp circuitry and forms fully integrated gyrator circuits with inverting passive circuitry embedded within high-peak bandwidth I/O channels of each semiconductor circuit module;
• and,
• electrical communications and power interface is created to modulate resonant gate transistors and other functions in each of the semiconductor circuit modules forming the bonded pair.
• wherein one or more inductive and other passive circuit elements are electrically insulated within the transistor's gate electrode to form a passive filtering network that causes the resonant gate transistor to resonate and amplify or switch signals over a band of pre-determined frequencies,
• wherein the fully integrated gyrator functions as an amplifying equalization circuit, wherein the high-peak bandwidth I/O channels further comprise clock or data recovery circuits,
• wherein high energy density electroceramic dielectric forming passive circuit elements has physical dimension less than 1/20th of the guided wavelength of an operating frequency in excess of 3 GHz, preferably in excess of 300 GHz, and most preferably in excess of 1 THz,
• wherein one of the semiconductor circuit modules functions as a wireless transceiver within a satellite or terrestrial telecommunications network,
• wherein one of the semiconductor circuit modules functions as an optical or electro-optical transceiver within a space-based satellite system or a terrestrial fiber-optic telecommunications network,
• wherein one of the semiconductor circuit modules functions as a processor unit within a server farm or server farm network,
• wherein the processor unit is a hybrid computing module,
• and,
• wherein one of the semiconductor circuit modules functions as a wireless transceiver in a mobile device that interfaces with a regional or global server farm network.

A method for manufacturing a high peak bandwidth I/O channel utilizing liquid chemical deposition methods and back-end-of-line techniques to integrate high energy density electroceramic dielectric, conductive means, and low permittivity/ultra-low loss dielectric, preferably amorphous silica dielectric, within a multilayer surface interface having submicron feature size formed on a substrate, wherein the multilayer surface interface comprises ground, power, and signal data planes, and further comprising, singly or in any combination, the following:

• a substrate that is a semiconductor,
• wherein the semiconductor substrate comprises active circuitry integrated within an active layer of the substrate surface,
• and further, wherein the high peak bandwidth I/O channel comprises a signal control plane that further comprises:
• a first layer of low permittivity/ultra-low loss dielectric, conductive means layer, and a second layer of low permittivity/ultra-low loss dielectric is formed,
• wherein openings etched within the first layer of low permittivity/ultra-low loss dielectric to provide a via path and optional ground wall connections to the active layer of the semiconductor substrate surface,
• the conductive means layer is applied and photo-lithographically patterned to form an electrical interface with active circuitry within the active layer of the semiconductor substrate surface through the openings etched within the first layer of low permittivity/ultra-low loss dielectric,
• the applied conductive means layer is optionally polished,
• the second layer of low permittivity/ultra-low loss dielectric is formed,
• and,
• openings are etched into the second layer of low permittivity/ultra low-loss dielectric to provide a via opening and optional ground wall connections to the applied conductive means forming an electrical interface with active circuitry within the active layer of the semiconductor substrate and the via openings are subsequently filed by conductive means to complete electrical interface to subsequent layers in the multilayer surface interface,
• wherein one or more ground planes is formed by applying conductive means to the substrate or a previously formed layer of low permittivity/ultra-low loss dielectric,
• and the conductive means forming the ground plane layer is photo-lithographically patterned to meet a specific design objective for the high peak bandwidth I/O channel or to create an opening needed to form an electrical interface through a via with conductive means on other layers within the multilayer surface interface,

A networked computing system consisting of a telecommunications system that contains network nodes and manages the flow of data between and within server farms, wherein the hardware forming the telecommunications system, transceiver circuits within network nodes, and server farms comprise hybrid computing modules that consist of:

• semiconductor die that serve all functions needed to support networked computing,
• wherein,
• the semiconductor die are mounted on a substrate that forms an electrical interface between the semiconductor die in the hybrid computing module,
• and,
• the substrate comprises a multilayer surface interface that further comprises a high peak bandwidth I/O channel consisting of:
• low permittivity/ultra-low loss dielectric;
• conductive means used to form ground planes, power planes, and signal data planes and electrical interface between the ground planes, power planes, and signal data planes;
• wherein,
• the signal data planes further comprise high energy density electroceramic dielectric embedded within layers of low permittivity/ultra-low loss dielectric and photo-lithographically patterned to form passive circuit elements configured to function as a passive filtering network;
• and,
• wherein high energy density electroceramic dielectric forming capacitive passive circuit elements has a dielectric response that polarizes and de-polarizes on femto-second time scales and maintains physical dimension less than 1/20th of the guided wavelength of a system operating frequency in excess of 3 GHz, preferably in excess of 300 GHz, and most preferably in excess of 1 THz,
• and further comprising singly or in combination the following:
• wherein the substrate is a semiconductor carrier wherein the multilayer layer interface comprises a control signal layer and active circuitry embedded within an active semiconductor layer,
• wherein a plurality of semiconductor die are bonded within a chip stack comprising an interposer circuit,
• wherein the interposer circuit comprises a high peak bandwidth I/O channel,
• wherein the interposer circuit comprises a semiconductor substrate and a multilayer layer interface comprises a control signal layer and active circuitry embedded within an active semiconductor layer,
• wherein the hybrid computing module comprises a multilayer layer interface having a control signal layer and active circuitry embedded within an active semiconductor layer,
• wherein the active circuitry comprises a resonant gate transistor,
• wherein the active circuitry comprises an operational amplifier,
• wherein the hybrid computing module comprises a fully integrated gyrator,
• wherein the high peak bandwidth I/O channels form an electrical interface between the semiconductor die and an electro-optic transceiver that further comprises high peak bandwidth I/O channels within its internal circuitry that encodes electronic signal data processed by the hybrid computing module into optical signal data transmitted from the hybrid computing module though a local optical communications bus and decodes optical signal data received by the hybrid computing module from the local optical communications bus into electronic signal data to be processed by the hybrid computing module,
• wherein an electro-optic transceiver comprises a material layer forming a 3D quantum gas,
• wherein the telecommunications system forms a regional network consisting of wireless, optical and satellite telecommunications systems,
• wherein the telecommunications system forms a global network consisting of wireless, optical and satellite telecommunications systems,
• wherein the passive filtering network is configured to function as an equalization circuit,
• wherein the equalization circuit enables clock and data recovery,
• wherein the passive filtering network is formed by planar passive circuit elements,
• wherein the passive filtering network is embedded within an integrated via,
• wherein the passive filtering network is an amplifying equalization circuit,
• wherein the telecommunications systems interact with mobile computing devices that comprise circuit modules consisting of high peak bandwidth I/O channels,

An integrated via that comprises a via contact pad in electrical communication with an input or output electrode and an I/O link embedded within a multilayer surface interface formed on substrate, wherein

• at least one passive circuit element comprising high energy density electroceramic dielectric is inserted as an arcuate construction around the circumference of the via contact pad to form a capacitive, inductive, or resistive passive circuit element electrically connected in series or in parallel with a ground plane, a power plane, or an I/O link embedded within the signal data plane on which the via contact pad is located, or an I/O link on other signal data planes located above or below the via contact pad within the multilayer surface interface with which the via contact pad forms an electrical connection
• and,
• high energy density electroceramic dielectric forming a capacitive passive circuit element has a dielectric response that polarizes and de-polarizes on femto-second time scales and maintains physical dimension less than 1/20th of the guided wavelength of a system operating frequency in excess of 3 GHz, preferably in excess of 300 GHz, and most preferably in excess of 1 THz, singly or in combination with any of the following:
• wherein the at least one passive circuit element is part of a passive filtering network,
• wherein the passive filtering network comprises planar passive components,
• wherein the passive filtering network comprises a plurality of integrated vias,
• wherein the via contact pad is in electrical communication with a semiconductor die,
• wherein the substrate is a semiconductor substrate comprising active circuitry embedded with a semiconductor surface active layer,
• wherein the integrated via is in electrical communication with the active circuitry,
• wherein the active circuitry comprises a resonant gate transistor,
• wherein the active circuitry is an operational amplifier,
• wherein the integrated via is part of a fully integrated gyrator,
• wherein the active circuitry is an active switching element,
• wherein the passive filtering network forms a termination circuit,
• wherein the passive filtering network forms an equalization circuit,
• wherein the passive filtering network resonates at a select frequency or over pre-determined frequency bands,
• wherein the passive filtering network is part of a clock or data recovery circuit, wherein the via contact pad comprises a plurality of passive circuit elements that are electrically connected in series within the via contact pad,
• wherein the via contact pad comprises a plurality of passive circuit elements wherein at least two passive circuit elements are electrically connected in parallel through a branching point,
• wherein the at least one passive circuit element is part of a passive filtering network and the integrated via forms an amplifying equalization circuit comprising an active circuit element,
• wherein the active circuit element is a resonant gate transistor,
• wherein the high energy density electroceramic dielectric comprises a crystalline lattice wherein its unit cell with a median atomic mass greater than 25 amu, preferably greater than 70 amu,
• wherein the high energy density electroceramic dielectric of a capacitive circuit element has a relative permittivity εR above 70, preferably a relative permeability in the range of range of 200 εR≤800,
• wherein the high energy density electroceramic dielectric has stoichiometry given by:
• wherein, Zr is zirconium, Hf is hafnium, Ti is titanium, O is oxygen, and M(I), M(II), M(III), M(IV) are additional metal oxide components that form a thermodynamically stable perovskite crystal and x, y, and z, are fractional molar percentages forming ratios such that the sum of all M(I), M(II), M(III), M(IV) elemental components satisfies the constraint:
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• wherein the additional metal oxide components M(I), M(II), M(III), M(IV) comprise scandium (Sc), vanadium (V), chromium (Cr), manganese (Mn), zinc (Zn), niobium (Nb), molybdenum (Mo), tantalum (Ta), tungsten (W), lanthanum (La), cerium (Ce), praseodymium (Pr) neodymium (Nd), samarium (Sm), europium (Eu), terbium (Tb), dysprosium (Dy), holmium (Ho), ytterbium (Yb), indium (In), tin (Sn), lead (Pb) or bismuth (Bi).