Converter

A method, comprising:

• driving a first HEMT power transistor of a first chip with a first control circuit of the first chip of a voltage converter;
• driving a second HEMT power transistor of a second chip with a second control circuit of the second chip of the voltage converter, the first and second HEMT power transistor being coupled together in a half bridge configuration, wherein the first chip is a high side chip and the second chip is a low side chip;
• receiving, with the second chip, first control signals for the first chip from a third control circuit external to the first and second chips;
• receiving, with the second chip, second control signals for the second chip from the third control circuit;
• providing the first control signals from the second chip to the first chip;
• receiving an input voltage of the voltage regulator at the second chip;
• and
• generating an output voltage of the voltage regulator at an output of the half bridge circuit.

A method, comprising:

• forming a first chip of a voltage converter, including:
• forming a first HEMT power transistor in the first chip;
• and
• forming a first driver circuit of the first HEMT transistor in the first chip;
• forming a second chip of the voltage converter, including:
• forming a second HEMT power transistor in the second chip;
• and
• forming a second driver circuit of the second HEMT transistor in the second chip;
• coupling the first and second HEMT transistors together in a half bridge configuration;
• and
• coupling a third control circuit to the second chip and configured to provide to the second chip first control signals for the first chip, to provide second control signal to the second chip for controlling the second chip, and to provide an input voltage of the voltage regulator to the second chip, the voltage regulator configured to provide an output voltage of the voltage regulator from a joint terminal of the first and second HEMT transistors.