Power semiconductor drive device
AssigneeMitsubishi Electric Corporation
InventorsMotoki IMANISHI, Mitsutaka HANO
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AssigneeMitsubishi Electric Corporation
InventorsMotoki IMANISHI, Mitsutaka HANO
Estimating the term…
An object is to provide a technique capable of appropriately driving a plurality of power semiconductor elements each having reference potential different from each other. A power semiconductor drive device includes: a conversion circuit converting a serial signal from an outer part into a plurality of parallel signals; a plurality of drive circuits driving a plurality of power semiconductor elements each having reference potential different from each other, respectively; a plurality of level shift circuits connected between the conversion circuit and the plurality of drive circuits and level-shifting the plurality of parallel signals in accordance with the reference potential of the plurality of power semiconductor elements, respectively; and a voltage holding structure electrically separating each of the plurality of drive circuits.
A power semiconductor drive device, comprising:
Dependencies are inferred from the claim text.