Repair structure for extreme-bandwidth three-dimensional (3d) stacked dynamic random-access memory (dram) including base die for near-memory computing

Abstract

A three-dimensional (3D) stacked memory package is described. The 3D stacked memory package includes a base die having an array of processing units (PUs) including at least one spare PU. The 3D stacked memory package also includes memory dies stacked on the base die and having bank tiles, including at least one spare bank tile. The 3D stacked memory package further includes a package substrate supporting the base die. The 3D stacked memory package also includes through substrate vias (TSVs) extending between the memory dies and landing on the base die and having at least one spare TSV per bank tile. The 3D stacked memory package further includes a repair structure configured to reroute a data/control bus to replace one of a failed bank tile with the spare bank tile, a failed TSV with the at least one spare TSV, and/or a failed PU with the spare PU.

Dependencies are inferred from the claim text.