Memory devices and operation methods thereof, memory systems and storage media

Abstract

Examples of the present disclosure provide a memory device, an operation method thereof, a memory system and a storage medium. The memory device includes a memory cell array including: a plurality of memory cells, and a peripheral circuit coupled with the memory cell array and configured to apply a read voltage to a selected word line coupled to a target memory cell of the plurality of memory cells and apply a pass voltage to a non-selected word line adjacent to the selected word line when performing a read operation on the target memory cell, wherein the pass voltage is related to the read voltage and a working temperature of the memory device when the read operation is performed.

Dependencies are inferred from the claim text.