Memory storage apparatus and method for reading memory storage apparatus

A reading method of a memory storage apparatus, wherein the memory storage apparatus comprises a memory cell array, and the memory cell array comprises a plurality of first memory cells and a plurality of second memory cells, the reading method of the memory storage apparatus comprising:

• setting an initial waiting period and an initial conduction period as a first waiting period and a first conduction period;
• reading data stored in first memory cells according to the first waiting period and the first conduction period;
• determining whether the first memory cells achieve the read pass;
• and
• when the first memory cells do not achieve the read pass, adjusting the first waiting period and the first conduction period until the first memory cells achieve the read pass.