Memory structure with secure global erase
AssigneeSanDisk Technologies LLC
InventorDaniel Bedau
Life of this patent
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Abstract
A memory structure is located on a substrate. The memory structure includes electrically conductive lines connected to memory cells with electrically insulating material between the electrically conductive lines. The memory structure further includes an energy-release material in at least one of the electrically conductive lines, the memory cells, the electrically insulating material or the substrate.
Claims20
A memory structure formed on a substrate, the memory structure including electrically conductive lines connected to memory cells with electrically insulating material between adjacent electrically conductive lines, the memory structure including an energy-release material in at least one of the electrically conductive lines, the memory cells, the electrically insulating material or the substrate.
A method comprising:
- forming a plurality of memory cells on a substrate;
- forming a plurality of electrically-conductive lines connected to the plurality of memory cells;
- forming electrical insulation between the plurality of electrically-conductive lines;
- and
- depositing an energy-release material over the substrate such that the energy-release material forms part of the plurality of memory cells, part of the plurality of electrically-conductive lines, or part of the electrical insulation between the plurality of electrically-conductive lines.
A data storage system comprising:
- a memory die that includes a plurality of memory cells configured to store data in two or more programmed data states;
- and
- means for exothermically reacting an energy-release material in the memory die with sufficient energy to change programmed data states of the plurality of memory cells, the means for exothermically reacting located in one or more layer of the memory die.
Dependencies are inferred from the claim text.