Computing-in-memory circuit
AssigneeMacronix International Co., Ltd.
InventorsHang-Ting Lue, Teng-Hao Yeh, Wei-Chen Chen, Chun-Hsiung Hung, Hsin-Yi HO
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AssigneeMacronix International Co., Ltd.
InventorsHang-Ting Lue, Teng-Hao Yeh, Wei-Chen Chen, Chun-Hsiung Hung, Hsin-Yi HO
Estimating the term…
A computing-in-memory circuit including latches and NOR gates is provided. Each latch has a word line, a bit line, a complementary bit line, and first and second output ends. The bit line is coupled to a local bit line of one memory string in a memory array. The complementary bit line is coupled to a local complementary bit line of the memory string. The memory string includes storage units, each having a memory cell pair. The second output end provides a weight signal, sensed by the latch, from the memory cell. Each NOR gate has a first input end coupled to the second output end of the latch, a second input end receiving an external input signal, and an output end outputting a product of the weight and input signals.
A computing in memory circuit, comprising:
A computing in memory circuit, comprising:
A computing-in-memory circuit, comprising:
Dependencies are inferred from the claim text.