Memory device and memory system

A memory device, comprising:

• a memory string configured to store stored data, and configured to receive a plurality of word line signals carrying input data, to compare the input data with the stored data to generate a string current signal,
• wherein the memory string comprises a first memory cell,
• the first memory cell comprises a first switch element and a second switch element coupled in series,
• the first switch element and the second switch element are configured to receive a first word line signal of the plurality of word line signals and a second word line signal of the plurality of word line signals, respectively,
• when the stored data have a first quantized value, the first switch element and the second switch element respectively have a first threshold voltage level and a second threshold voltage level,
• when the input data have the first quantized value, the first word line signal and the second word line signal respectively have a first voltage level and a second voltage level, and
• when the input data have a second quantized value different from the first quantized value, the first word line signal and the second word line signal respectively have the second voltage level and the first voltage level.

A memory system, comprising:

• a plurality of memory chunks configured to receive a plurality of string select line signals,
• wherein the plurality of memory chunks at least comprise a first memory string configured to store first stored data and a second memory string configured to store second stored data,
• the first memory string is configured to compare the first stored data and input data to generate a first string current signal,
• the second memory string is configured to compare the second stored data and the input data to generate a second string current signal,
• in response to a quantized value of the input data being equal to a quantized value of the first stored data, the first string current signal has a first current level, and
• in response to the quantized value of the input data being different from the quantized value of the second stored data, the second string current signal has a second current level lower than the first current level.