Process and temperature compensated word line underdrive scheme for sram
AssigneeSTMicroelectronics International N.V.
InventorsAshish KUMAR, Dipti ARYA
Life of this patent
Estimating the term…
Loading patent…
AssigneeSTMicroelectronics International N.V.
InventorsAshish KUMAR, Dipti ARYA
Estimating the term…
An SRAM architecture is disclosed that provides a process- and temperature-compensated word-line underdrive scheme enabling stable, low-voltage operation. Each row decoder generates an initial word-line signal, derives an inverse word-line signal, and drives the corresponding word line through driver circuitry including a word-line underdrive p-channel transistor. The transistor's gate is controlled by the inverse word-line signal and optionally receives a dynamically generated negative bias to reduce device size while maintaining performance. Control circuitry includes a word-line underdrive sink circuit having dummy memory cells that replicate bit-cell behavior to generate a compensated driver output signal tracking process and temperature variations. A negative bump generator produces a transient below-ground potential at the gate node to enhance underdrive efficiency. This improves bit-cell stability, dynamic noise-margin yield, and performance uniformity across process corners and temperature, while minimizing silicon area.
An electronic device, comprising:
A method of operating an electronic device comprising a plurality of row decoders and control circuitry, the method comprising:
An electronic device, comprising:
Dependencies are inferred from the claim text.