US 2026/0065950 A1 · SEMICONDUCTOR MEMORY DEVICE

Abstract

According to one embodiment, a semiconductor memory device includes: a substrate; a layer stack disposed above the substrate in a first direction; a first conductive layer disposed between the substrate and the layer stack; a memory pillar including a semiconductor film, extending in the first direction, and penetrating the first conductive layer; and a first member disposed apart from the memory pillar in a second direction intersecting the first direction, extending in the first direction, and penetrating the first conductive layer. The layer stack has a structure in which a first semiconductor layer, a second semiconductor layer, a second conductive layer, and a third conductive layer are stacked in order from a side of the substrate. The first semiconductor layer covers an end portion of the semiconductor film in the first direction and an end portion of the first member in the first direction.

Claims20

Dependent claims

A semiconductor memory device comprising:

a substrate;
a layer stack disposed above the substrate in a first direction;
a first conductive layer disposed between the substrate and the layer stack;
a memory pillar that includes a semiconductor film, extends in the first direction, and penetrates the first conductive layer;
and
a first member that is disposed apart from the memory pillar in a second direction intersecting the first direction, extends in the first direction, and penetrates the first conductive layer,
wherein the layer stack has a structure in which a first semiconductor layer, a second semiconductor layer, a second conductive layer, and a third conductive layer are stacked in order from a side of the substrate, and
the first semiconductor layer covers an end portion of the semiconductor film in the first direction and an end portion of the first member in the first direction.

5 more elements

A semiconductor memory device comprising:

a substrate;
a layer stack disposed above the substrate in a first direction;
a first conductive layer disposed between the substrate and the layer stack;
a memory pillar that includes a semiconductor film, extends in the first direction, and penetrates the first conductive layer;
and
a first member that is disposed apart from the memory pillar in a second direction intersecting the first direction, extends in the first direction, and penetrates the first conductive layer,
wherein the layer stack has a structure in which a first semiconductor layer, a second conductive layer, and a third conductive layer are stacked in order from a side of the substrate,
the first member includes a conductor and a first insulator that covers a side surface of the conductor in the second direction, and
the first semiconductor layer covers an end portion of the semiconductor film in the first direction and an end portion of the conductor in the first direction.

6 more elements

A semiconductor memory device comprising:

a substrate;
a layer stack disposed above the substrate in a first direction;
a first conductive layer disposed between the substrate and the layer stack;
a memory pillar that includes a semiconductor film, extends in the first direction, and penetrates the first conductive layer;
and
a first member that is disposed apart from the memory pillar in a second direction intersecting the first direction, extends in the first direction, and penetrates the first conductive layer,
wherein the layer stack has a structure in which a second conductive layer and a third conductive layer are stacked in order from a side of the substrate, and
the second conductive layer covers an end portion of the semiconductor film in the first direction and an end portion of the first member in the first direction.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor memory device

Life of this patent

Semiconductor memory device

Life of this patent

Abstract

Claims20