Training method

Abstract

A method is used for training a reinforcement learning (RL) model to predict a breakdown voltage (BV) of a semiconductor device with a guard ring. The method comprises determining a set of structural parameters of the semiconductor device; preparing a training dataset formed by a plurality of manufacturing parameters of the semiconductor device, wherein the plurality of manufacturing parameters comprise a dose concentration and at least one dose energy of implanting a guard ring (GR) on the semiconductor device; and training the RL model using the training dataset by maximizing a reward function calculated based on a between a predicted BV value generated by the RL model and a target BV value corresponding to the plurality of manufacturing parameters.

Dependencies are inferred from the claim text.