Memory device bad column identification and compensation
AssigneeMicron Technology, Inc.
InventorsJUN WAN, YING TAI, WEI WANG, ZHENMING ZHOU
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AssigneeMicron Technology, Inc.
InventorsJUN WAN, YING TAI, WEI WANG, ZHENMING ZHOU
Estimating the term…
A method for managing error correction in a memory device includes identifying, by a memory controller, codewords in a memory array of the memory device that have bad columns. The method includes calculating, by the memory controller, an increased Error Correction Code (ECC) layer for each identified codeword based on a number of errors introduced by the bad columns. The method also includes redistributing, by the memory controller, ECC layers from one or more other codewords that have extra ECC layers to increase the ECC layers for the identified codewords with bad columns to enable implementation of the redistributed ECC layers on each codeword in the memory array.
A method for managing error correction in a memory device, the method comprising:
A memory sub-system comprising:
A non-transitory computer-readable medium storing instructions that, when executed by a processor of a memory sub-system, cause the memory sub-system to perform operations comprising:
Dependencies are inferred from the claim text.