Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsHaejung CHOI, Jooseong KIM, Himchan PARK, Junhyeok YANG, Sungmin YOO, Michael CHOI
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Abstract
A semiconductor device includes a first die manufactured under first process conditions and a second die manufactured under second process conditions. The first die includes a reference generation circuit including a bipolar junction transistor (BJT) element. The second die is configured to operate based on a reference value generated by the reference generation circuit. The first process conditions are different from the second process conditions.
Claims21
A semiconductor device comprising:
- a first die having a first structure;
- and
- a second die having a second structure,
- wherein the first die comprises a reference generation circuit comprising a bipolar junction transistor (BJT) element,
- the second die is configured to operate based on a reference value generated by the reference generation circuit, and
- the first structure is different from the second structure.
A semiconductor device comprising a first die and a second die that are stacked in a vertical direction,
- wherein the first die comprises a reference generation circuit comprising a bipolar junction transistor (BJT) element,
- the second die is configured to operate based on a reference value generated by the reference generation circuit, and
- the second die includes a transistor having a line width of less than 3 nm.
A semiconductor device comprising:
- a first die and a second die that are arranged in a horizontal direction,
- wherein the first die comprises a reference generation circuit comprising a bipolar junction transistor (BJT) element,
- the second die is configured to operate based on a reference value generated by the reference generation circuit,
- the second die includes a transistor having a line width of less than 3 nm, and
- the first die and the second die are arranged on an interposer layer.
21-25. (canceled)
Dependencies are inferred from the claim text.