Extreme ultra-violet lithography system having sensor module
AssigneeSamsung Electronics Co., Ltd.
InventorsIk Sun PARK, Akinori OKUBO, Eun Hee JEANG, Kyoung Whan OH
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsIk Sun PARK, Akinori OKUBO, Eun Hee JEANG, Kyoung Whan OH
Estimating the term…
An extreme ultra-violet (EUV) lithography system includes a source module generating light, a field facet mirror including first mirrors that collect the light transmitted from the source module, a pupil facet mirror including second mirrors that transmit the light transmitted from the field facet mirror to a reticle, a projection optical system transmitting the light reflected from the reticle to a substrate, a sensor module disposed on a substrate stage that supports the substrate and generating a first image representing a light intensity distribution, and a processor performing a Fourier transformation on the first image to generate a second image representing a first pupil region defined by a first center point and a plurality of second center points each spaced apart from the first center point by a first distance. The first center point is located at a center of the first pupil region.
An extreme ultra-violet (EUV) lithography system comprising:
An extreme ultra-violet (EUV) lithography system comprising:
An extreme ultra-violet (EUV) lithography system comprising:
Dependencies are inferred from the claim text.