Strain gauge, strain measurement device, and strain measurement method
AssigneeResearch Institute For Electromagnetic Materials
InventorsNobukiyo KOBAYASHI, Yui HASEGAWA, Kenji IKEDA, Tadayoshi IWASA
Life of this patent
Estimating the term…
Loading patent…
AssigneeResearch Institute For Electromagnetic Materials
InventorsNobukiyo KOBAYASHI, Yui HASEGAWA, Kenji IKEDA, Tadayoshi IWASA
Estimating the term…
To provide a strain gauge that can achieve improvement of practicality. A nano-granular structure film constituting a resistor 2 formed on one main surface of a substrate 1 of a strain gauge has a composition represented by a general formula L100-a-b-cMaFbOc (L is one or more metal elements selected from Fe, Co, Ni, Pt, Au, Ag, and Cu; M is one or more elements selected from Li, Mg, Al, Ca, Sr, Ba, Gd, and Y: F is fluorine: O is oxygen; and 40.0≤(a+b+c)≤63.0). The resistor 2 is constituted of a nano-granular structure film in which metal particles Q1 represented by L and having an average particle diameter of 1.0 to 5.0 nm are distributed in an insulating matrix Q2 formed of a fluoride of M or a fluoride and an oxide of M.
A strain gauge comprising:
Dependencies are inferred from the claim text.