Active sic heating with zonality control for epi chamber thermal profile adjusting
AssigneeApplied Materials, Inc.
InventorZhepeng CONG
Life of this patent
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Abstract
A processing chamber includes a chamber body, a lid disposed over the chamber body, and one or more first laser devices disposed over the lid. The one or more first laser devices are configured to emit light having a wavelength of about 380 nm to about 600 nm. A first isolation plate is disposed within an internal volume that is at least partially defined by the chamber body. A semi-translucent layer is disposed over the first isolation plate. The semi-translucent layer configured to absorb at least part of the light emitted from the one or more first laser devices.
Claims20
A processing chamber comprising:
- a chamber body;
- a lid disposed over the chamber body;
- one or more first laser devices disposed over the lid, the one or more first laser devices configured to emit light having a wavelength of about 380 nm to about 600 nm;
- a first isolation plate disposed within an internal volume that is at least partially defined by the chamber body;
- and
- a semi-translucent layer disposed over the first isolation plate, the semi-translucent layer configured to absorb at least part of the light emitted from the one or more first laser devices.
A method comprising:
- depositing an epitaxial film on a first substrate in a processing chamber, the processing chamber comprising:
- one or more laser devices;
- a semi-translucent layer disposed over the first substrate, the semi-translucent layer configured to absorb at least a portion of the light emitted from the one or more laser devices;
- and
- a scanning laser system comprising:
- the one or more laser devices;
- reflective mirrors that are aligned with each of the one or more laser devices;
- and
- a controller coupled to the one or more laser devices and the reflective mirrors;
- determining the epitaxial film has a non-uniform thickness, the determining that the epitaxial film has the non-uniform thickness comprising determining one or more locations on the first substrate in which the thickness of the epitaxial film is different than a target thickness;
- and
- adjusting a temperature of the semi-translucent layer, the adjusting of the semi-translucent layer comprising steering, by the controller using the reflective mirrors, the one or more laser devices to one or more locations on the semi-translucent layer that correspond to the one or more locations of the first substrate in which the thickness of the epitaxial film is different than the target thickness during deposition of the epitaxial film on a subsequent substrate.
A method for processing a substrate comprising:
- determining a temperature of a semi-translucent layer disposed over an isolation plate of a processing chamber using one or more sensors;
- and
- based on determining that the semi-translucent layer is outside of a target temperature range, adjusting the temperature of the semi-translucent layer by adjusting a power of one or more laser devices, the one or more laser devices configured to emit light having a wavelength of about 380 nm to about 600 nm, and the semi-translucent layer configured to absorb at a portion of the light emitted by the one or more laser devices.
Dependencies are inferred from the claim text.