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US 2026/0062798 A1Published application
Evaporation mask and manufacturing method of the same
AssigneeCanon Kabushiki Kaisha
InventorTAKAYUKI SUMIDA
Life of this patent
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Abstract
In a mask made of metal, a side wall of an opening has a boundary in a thickness direction and has a taper shape from the boundary toward the first surface and the second surface, and both a taper angle θ1 on the first surface side on a deposition source side and another taper angle θ2 on the second surface side on a deposition receiving substrate side are sharp angles and satisfy θ1>θ2.
Claims7
An evaporation mask made of metal, the evaporation mask comprising:
- a first surface on a deposition source side;
- a second surface on a side facing a deposition receiving substrate;
- and
- an opening penetrating from the first surface to the second surface,
- wherein a side wall surrounding the opening has a boundary between the first surface and the second surface and has a taper shape from the boundary toward the first surface and a taper shape from the boundary toward the second surface, and
- wherein, in a cross-section passing through the first surface, the second surface, and the opening, when a taper angle formed by the side wall and an extended line drawn from the first surface onto the opening is denoted by θ1, and another taper angle formed by the side wall and an extended line drawn from the second surface onto the opening is denoted by θ2, both the taper angles θ1 and θ2 are sharp angles and satisfy θ1>θ2.
3 more elements
A manufacturing method of an evaporation mask, the manufacturing method comprising:
- providing a seed layer on a surface of a substrate;
- forming, on the surface of the substrate, a first resist pattern having a taper angle θ2 as an angle with respect to the surface;
- forming, on the first resist pattern, a second resist pattern having a taper angle θ1 as an angle with respect to the surface;
- electrically precipitating a metal film in a space in the first and second resist patterns;
- forming an opening in the metal film by removing the first and second resist patterns;
- and
- removing the substrate and the seed layer from the metal film in which the opening is formed,
- wherein both the taper angles θ1 and θ2 are sharp angles and satisfy θ1>θ2.
5 more elements
Dependencies are inferred from the claim text.