Polishing pad for semiconductor hybrid bonding and preparation method of semiconductor device using the same

A polishing pad, which comprises a polishing layer, wherein the dishing value is 0.5 nm to 3.5 nm, and

• wherein when an object to be polished comprising a first region having a coefficient of thermal expansion of 1.0×10−7 mm/mm° C. to 3.5×10−6 mm/mm° C. and a second region having a coefficient of thermal expansion of 4.0×10−6 mm/mm° C. to 3.0×10−5 mm/mm° C. is polished for 10 seconds with the polishing pad under the conditions of a rotation speed of the polishing pad of 93 rpm, a rotation speed of the object to be polished of 87 rpm, and a polishing load of 5.0 psi, while a ceria slurry (ACS-580, KC Tech) is sprayed at a rate of 150 ml/minute, the dishing value is the difference in thickness change (nm) between the first region and the second region.