Semiconductor device including interconnect structure and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• forming an adhesion layer on a first interconnect structure disposed over a substrate;
• forming a plurality of conductive interconnects on the adhesion layer, the plurality of conductive interconnects being spaced apart from each other so as to form a plurality of trenches among the plurality of conductive interconnects and to expose a plurality of portions of the adhesion layer through the plurality of trenches, respectively;
• forming the plurality of portions of the adhesion layer into a first molecular organic framework layer such that the first molecular organic framework layer fills the plurality of trenches;
• and
• forming a second interconnect structure, which includes a second molecular organic framework layer disposed on the first molecular organic framework layer and the plurality of conductive interconnects, and a conductive interconnect feature disposed in the second molecular organic framework layer.

A semiconductor device, comprising:

• a substrate;
• a first interconnect structure disposed over the substrate;
• and
• a second interconnect structure disposed on the first interconnect structure, and including:
• a molecular organic framework layer disposed on the first interconnect structure;
• and
• a plurality of conductive interconnects disposed in the molecular organic framework layer.