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US 2026/0060055 A1Published application
Method for treating semiconductor substrate
AssigneeTokuyama Corporation
InventorsYuki KIKKAWA, Yuzan SUZUKI
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Abstract
A method for treating a semiconductor substrate containing a refractory metal and copper, the method including: an oxidation treatment step of forming copper oxide on a surface of the copper; and a step of removing the refractory metal after the oxidation treatment step.
Claims6
A method for treating a semiconductor substrate containing a refractory metal and copper, the method comprising:
- an oxidation treatment that includes forming copper oxide on a surface of the copper;
- and
- removing the refractory metal after the oxidation treatment.
Dependencies are inferred from the claim text.