Method for forming an insulating layer pattern and semiconductor device

A semiconductor device comprising:

• a substrate including two or more different types of dielectric layer regions;
• and
• a silicon oxide insulating layer formed on the substrate, wherein the silicon oxide insulating layer includes a first region and a second region in which the silicon oxide insulating layer is selectively formed such that, in the second region, the silicon oxide insulating layer is formed, and in the first region, no silicon oxide insulating layer is formed or the silicon oxide insulating layer is formed with a substantially less thickness than in the second region,
• wherein a thickness difference between the silicon oxide insulating layer formed on the first region and the second region is 4.5 nm or more.