Semiconductor element bonding substrate, semiconductor device, and power conversion device
AssigneeMitsubishi Electric Corporation
InventorSatoru ISHIKAWA
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Abstract
A semiconductor element bonding substrate according to the present invention includes an insulating plate, and a metal pattern bonded to a main surface of the insulating plate. A main surface of the metal pattern on an opposite side of the insulating plate includes a bonding region to which a semiconductor element is bonded by a solder. The metal pattern includes at least one concave part located in the main surface. The at least one concave part is located closer to an edge of the bonding region in relation to a center part of the bonding region in the bonding region.
Claims7
A semiconductor element bonding substrate, comprising:
- an insulating plate;
- and
- a metal pattern bonded to a main surface of the insulating plate, wherein
- a main surface of the metal pattern on an opposite side of the insulating plate includes a bonding region to which a semiconductor element is bonded by a solder, and
- in the bonding region, the main surface of the metal pattern has a height different between a center part of the bonding region and a surrounding area of the center part.
Dependencies are inferred from the claim text.