Method of manufacturing device and device
AssigneeFujitsu Limited
InventorMakoto NAKAMURA
Life of this patent
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Abstract
A method of manufacturing a device includes forming a conductive film on a second surface of a substrate having a first surface and the second surface opposite to the first surface by using a non-superconducting material, forming a through hole penetrating the substrate by etching the substrate from the first surface after forming the conductive film, forming a through electrode in the through hole by using a superconducting material by an electroplating method using the conductive film exposed in the through hole as a seed layer, and removing the conductive film after forming the through electrode.
Claims14
A method of manufacturing a device comprising:
- forming a conductive film on a second surface of a substrate having a first surface and the second surface opposite to the first surface by using a non-superconducting material;
- forming a through hole penetrating the substrate by etching the substrate from the first surface after forming the conductive film;
- forming a through electrode in the through hole by using a superconducting material by an electroplating method using the conductive film exposed in the through hole as a seed layer;
- and
- removing the conductive film after forming the through electrode.
A device comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a through electrode that penetrates the substrate from the first surface to the second surface, the through electrode being formed of a superconducting material;
- and
- a wiring provided on the second surface so as to be connected to the through electrode, the wiring being formed of a superconducting material different from the through electrode,
- wherein the through electrode protrudes from the second surface and the wiring is in contact with at least a side surface of the through electrode.
Dependencies are inferred from the claim text.