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US 2026/0045767 A1Published application
Distributed reflector laser
OwnerToshihiko Makinoinventor
Life of this patent
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Abstract
The invention provides a distributed reflector (DR) semiconductor laser, comprising two cavity sections which are composed of a distributed feedback (DFB) laser section and a distributed Bragg reflector (DBR) section.
Claims10
A distributed reflector (DR) laser, comprising:
- a distributed feedback (DFB) section having a length in a range from 100 micrometers (μm) to 200 μm and comprising a DFB grating with a product of grating coupling coefficient kappa (κ) and a cavity length (L), κL, in a range from 2 to 6;
- and
- a distributed Bragg reflector (DBR) section coupled end to end with the DFB section, having a length in a range from 200 μm to 400 μm, and comprising a DBR grating with a product of grating coupling coefficient kappa (κ) and a cavity length (L), κL, in a range from 2 to 6.
Dependencies are inferred from the claim text.