Semiconductor device and method of manufacturing the same

A semiconductor device comprising a plurality of cells, the semiconductor device comprising:

• a first electrical conductor extending along a first direction and electrically coupled to a first voltage, wherein the first electrical conductor overlaps one of the boundaries between two adjacent ones of the cells;
• a second electrical conductor extending along the first direction and electrically coupled to a third voltage, wherein the second electrical conductor overlaps another one of the boundaries between two adjacent ones of the cells;
• a third electrical conductor extending along the first direction, electrically coupled to a second voltage and being disposed between the first electrical conductor and the second electrical conductor;
• and
• an active region extending along the first direction.

A method for manufacturing a semiconductor device, comprising:

• forming a first electrical conductor extending along a first direction and electrically coupled to a first voltage;
• forming a second electrical conductor extending along the first direction and electrically coupled to a second voltage, wherein the second voltage is smaller than the first voltage;
• forming a third electrical conductor extending along the first direction, electrically coupled to a third voltage and being disposed between the first electrical conductor and the second electrical conductor;
• and
• forming a plurality of metal features extending along a second direction perpendicular to the first direction and formed above the first electrical conductor, the second electrical conductor and the third electrical conductor.