Bonded semiconductor structures, and fabrication methods thereof
AssigneeQorvo US, Inc.
InventorsKrishna Bahadur Chetry, Michael Scott Carroll
Life of this patent
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Abstract
A bonded structure is provided. The bonded structure includes a first stack structure on a substrate, a second stack structure over the first stack structure, and a bonding interface between the first stack structure and the second stack structure. The second stack includes a via structure extending in the second stack structure and towards the bonding interface, the via structure having a first width closer to the bonding interface and a second width further away from the bonding interface. The first width is greater than the second width.
Claims20
A bonded structure, comprising:
- a first stack structure on a substrate;
- a second stack structure over the first stack structure;
- and
- a bonding interface between the first stack structure and the second stack structure, wherein the second stack comprises a via structure extending in the second stack structure and towards the bonding interface, the via structure having a first width closer to the bonding interface and a second width further away from the bonding interface, wherein the first width is greater than the second width.
A method to form a bonded structure, comprising:
- forming a first bonding structure comprising a first device layer over a substrate, a first interconnect layer over the first device layer, and a first bonding layer over the first device layer;
- forming a second bonding structure comprising a second bonding layer, a second device structure over the second bonding layer, and a second interconnect layer over the second device layer;
- and
- bonding the first bonding structure with the second bonding structure by bonding the first bonding layer with the second bonding layer.
Dependencies are inferred from the claim text.