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US 2026/0040905 A1Published application
Methods for forming spacers and related structures
AssigneeASM IP Holding B.V.
InventorsYoann Tomczak, Kishan Ashokbhai Patel
Life of this patent
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Abstract
Methods for patterning and forming structures, as well as related structures and systems are disclosed. The methods comprise forming a liner on sidewalls of a patterned resist. The patterned resist comprises a first metal, and the liner comprises a second metal.
Claims20
A system comprising:
- one or more precursor sources;
- a reaction chamber operationally coupled with the one or more precursor sources;
- and
- a controller configured to cause the system to perform a method comprising:
- providing a substrate to a reaction chamber, the substrate comprising a patterned resist, the patterned resist comprising a first metal, the patterned resist further comprising a plurality of patterned features and a plurality of recesses, the plurality of recesses comprising sidewalls and bottom portions;
- and
- forming a liner on the sidewalls by providing one or more precursors from the one or more precursor sources, the one or more precursors being in gas phase, wherein the liner comprises a second metal.
4 more elements
A structure comprising:
- a substrate;
- a patterned resist;
- and
- a liner,
- the patterned resist comprising a first metal, the patterned resist further comprising a plurality of patterned features and a plurality of recesses, the plurality of recesses comprising sidewalls and bottom portions;
- and
- the liner being positioned on the sidewalls, wherein the liner comprises a second metal.
4 more elements
A non-transitory addressable storage medium storing one or more software modules that, when executed by a hardware device, perform a method comprising:
- providing a substrate to a reaction chamber, the substrate comprising a patterned resist, the patterned resist comprising a first metal, the patterned resist further comprising a plurality of patterned features and a plurality of recesses, the plurality of recesses comprising sidewalls and bottom portions;
- and
- forming a liner on the sidewalls by providing one or more precursors from one or more precursor sources, wherein the liner comprises a second metal.
Dependencies are inferred from the claim text.