Inspection method of wafer dicing process

Abstract

A method of inspecting a wafer dicing process entails performing a scanning process on a grooved wafer with a light beam used by an optical scanning device. The method includes using a film layer of the grooved wafer as an incident surface for the scanning process; performing the scanning process on the grooved wafer in a Y-axis direction to obtain XZ section structure images corresponding in position to consecutive different Y-axis positions on the grooved wafer; analyzing the XZ section structure images at the consecutive different positions and defining positions corresponding in position to grooves, the film layer, a silicon layer and a metal layer; and analyzing a depth of each of the grooves to determine whether the grooved wafer is grooved successfully or grooved unsuccessfully. Therefore, the method is applicable to wafer processing procedures and addresses the lack of inspection methods in the wafer dicing process.

Dependencies are inferred from the claim text.