Treatments to control thickness of oxygen-containing materials

A semiconductor processing method comprising:

• providing one or more deposition precursors to a semiconductor processing chamber, wherein a substrate comprising a plurality of layers of silicon-and-germanium-containing material is housed within a processing region of the semiconductor processing chamber, wherein adjacent layers of silicon-and-germanium-containing material are vertically spaced apart to define a plurality of lateral gaps, and wherein one or more features extend through the plurality of layers of silicon-and-germanium-containing material and into the substrate;
• forming plasma effluents of the one or more deposition precursors;
• depositing a flowable oxygen-containing material on the substrate, wherein the flowable oxygen-containing material forms in the plurality of lateral gaps and in the one or more features extending into the substrate;
• providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber;
• and
• contacting the substrate with the hydrogen-containing precursor while applying a pulsed bias power, wherein the contacting reduces a thickness of the flowable oxygen-containing material in the one or more features extending into the substrate.

A semiconductor processing method comprising:

• providing one or more deposition precursors to a remote plasma system of a semiconductor processing chamber;
• forming plasma effluents of the one or more deposition precursors;
• providing the plasma effluents of the one or more deposition precursors to a processing region of the semiconductor processing chamber, wherein a substrate comprising a plurality of layers of a silicon-and-germanium-containing material is housed within the processing region, wherein adjacent layers of the silicon-and-germanium-containing material are vertically spaced apart to define a plurality of lateral gaps, and wherein one or more features extend through the plurality of layers of the silicon-and-germanium-containing material and into the substrate;
• depositing a flowable oxygen-containing material on the substrate, wherein the flowable oxygen-containing material forms in the plurality of lateral gaps and in the one or more features extending into the substrate;
• providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber;
• and
• contacting the substrate with the hydrogen-containing precursor while applying a pulsed bias power, wherein the contacting reduces a thickness of the flowable oxygen-containing material in the one or more features extending into the substrate while maintaining an amount of flowable oxygen-containing material in the plurality of lateral gaps.