Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
AssigneeKokusai Electric Corporation
InventorYoshitomo HASHIMOTO
Life of this patent
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Abstract
There is provided a technique that includes: (a) supplying a film-forming agent to the substrate having a recess on a surface thereof, the recess having a bottom surface formed by a first base and a side surface formed by a second base, and forming a first film on the first base with a thickness greater than a thickness of a first film formed on the second base; and (b) supplying an etching agent to the substrate, and removing the first film formed on the second base while leaving at least a part of the first film formed on the first base.
Claims20
A method of processing a substrate, comprising:
- (a) supplying a film-forming agent to the substrate having a recess on a surface thereof, the recess having a bottom surface formed by a first base and a side surface formed by a second base, and forming a first film on the first base with a thickness greater than a thickness of a first film formed on the second base;
- and
- (b) supplying an etching agent to the substrate, and removing the first film formed on the second base while leaving at least a part of the first film formed on the first base.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- (a) supplying a film-forming agent to a substrate having a recess on a surface thereof, the recess having a bottom surface formed by a first base and a side surface formed by a second base, and forming a first film on the first base with a thickness greater than a thickness of a first film formed on the second base;
- and
- (b) supplying an etching agent to the substrate, and removing the first film formed on the second base while leaving at least a part of the first film formed on the first base.
A substrate processing apparatus, comprising:
- a film-forming agent supply system configured to supply a film-forming agent to a substrate;
- an etching agent supply system configured to supply an etching agent to the substrate;
- and
- a controller configured to control the film-forming agent supply system and the etching agent supply system so as to perform (a) supplying the film-forming agent to the substrate having a recess on a surface thereof, the recess having a bottom surface formed by a first base and a side surface formed by a second base, and forming a first film on the first base with a thickness greater than a thickness of a first film formed on the second base, and (b) supplying the etching agent to the substrate, and removing the first film formed on the second base while leaving at least a part of the first film formed on the first base.
Dependencies are inferred from the claim text.