Display Device

A display device, comprising:

• a substrate;
• a first transistor on the substrate, the first transistor positioned in a first area;
• and
• a second transistor on the substrate, the second transistor positioned in a second area that is different from the first area,
• wherein the first transistor includes:
• a first active layer on the substrate, the first active layer positioned in the first area;
• a first gate insulation layer on the first active layer;
• and
• a first gate electrode on the first gate insulation layer, the first gate electrode overlapping at least a portion of the first active layer,
• wherein the second transistor includes:
• a second active layer on the substrate, the second active layer positioned in the second area;
• a second gate insulation layer on the second active layer;
• and
• a second gate electrode on the second gate insulation layer, the second gate electrode overlapping at least a portion of the second active layer, and
• wherein the first gate insulation layer includes an insulating material which is not included in the second gate insulation layer.

A display device, comprising:

• a substrate;
• a first transistor on the substrate, the first transistor positioned in a first area;
• a second transistor on the substrate, the second transistor positioned in a second area that is different from the first area;
• an insulation layer on the first transistor and the second transistor;
• and
• a touch electrode on the insulation layer, the first transistor including:
• a first active layer on the substrate, the first active layer positioned in the first area;
• a first gate insulation layer on the first active layer;
• and
• a first gate electrode on the first gate insulation layer, the first gate electrode overlapping at least a portion of the first active layer,
• wherein the second transistor includes:
• a second active layer on the substrate, the second active layer positioned in the second area;
• a second gate insulation layer on the second active layer;
• and
• a second gate electrode on the second gate insulation layer, the second gate electrode overlapping at least a portion of the second active layer,
• wherein the first gate electrode and the second gate electrode include a same gate metal,
• wherein the first active layer is closer to the substrate than the second active layer, and
• wherein the touch electrode is in the second area where the second transistor is disposed, among the first area and the second area.