Vertical charge transfer imaging sensor and manufacturing method therefor

A method of manufacturing a vertically charge transferring pixel sensor, comprising:

• providing a semiconductor substrate having a pixel area;
• forming shallow trench isolations and deep trench isolations at a first side of the semiconductor substrate, each of the deep trench isolations comprising a deep trench extending through the semiconductor substrate and, filled in the deep trench, a trench electrode and a first isolation dielectric, the first isolation dielectric insulating the trench electrode from the semiconductor substrate, the deep trench isolations defining a plurality of substrate cells in the pixel area, each of the substrate cell comprising a light sensing region and a charge readout region, which are isolated from each other by one of the shallow trench isolations;
• forming floating gates, an intergate dielectric layer and control gates over surfaces of the respective substrate cells, which extend from the light sensing regions to the charge readout regions, and forming source regions and drain regions on opposite sides of the respective control gates in the respective charge readout regions;
• and
• thinning the semiconductor substrate from a second side thereof until the deep trench isolations are exposed and forming at least one substrate electrode at the second side, which contacts two adjacent substrate cells and is isolated from the corresponding trench electrode that disposed between the two adjacent substrate cells.