Semiconductor die packages and methods of formation

A semiconductor die package, comprising:

• a first semiconductor die, comprising:
• a first substrate layer;
• a first interconnect layer vertically adjacent to a first side of the first substrate layer;
• a second interconnect layer vertically adjacent to a second side of the first substrate layer opposing the first side;
• a first capacitor structure in the first interconnect layer;
• and
• a second capacitor structure on the second side of the first substrate layer,
• wherein the second capacitor structure extends into the first substrate layer from the second side of the first substrate layer;
• and
• a second semiconductor die, comprising:
• a second substrate layer;
• a third interconnect layer vertically adjacent to a first side of the second substrate layer;
• and
• a pixel sensor array comprising a plurality of pixel sensors on a second side of the second substrate layer opposing the first side,
• wherein the first interconnect layer of the first semiconductor die is bonded to the third interconnect layer of the second semiconductor die.

A method, comprising:

• forming a first interconnect layer above a first side of a substrate layer of a semiconductor die;
• forming a first capacitor structure in the first interconnect layer;
• forming a second interconnect layer above a second side of the substrate layer vertically opposing the first side;
• and
• forming a second capacitor structure in the second interconnect layer.