Image sensor

An image sensor comprising:

• a substrate having a first surface and a second surface opposite the first surface;
• a photodiode region group comprising a plurality of photodiode regions, each of the plurality of photodiode regions comprising a photodiode;
• a first deep isolation pattern provided within the substrate and surrounding the photodiode region group;
• a plurality of second deep isolation patterns provided within the substrate and separating the plurality of photodiode regions from each other;
• a plurality of connection regions that are connected to the plurality of photodiode regions and are provided between the plurality of second deep isolation patterns spaced apart from each other, each of the plurality of connection regions comprising a doped isolation region and an additional doped isolation region;
• a shared ground region provided in one of the plurality of photodiode regions of the photodiode region group and the plurality of connection regions,
• wherein the additional doped isolation region is adjacent to a side surface of the first deep isolation pattern or a second deep isolation pattern of the plurality of second deep isolation patterns, and extends vertically along the side surface of the first deep isolation pattern or the second deep isolation pattern,
• wherein the doped isolation regions, the additional doped isolation region, and the shared ground region are doped with impurities having a same conductivity type, and
• wherein an impurity concentration of the shared ground region is higher than an impurity concentration of the doped isolation regions and the additional doped isolation region.

An image sensor comprising:

• a substrate having a first surface and a second surface opposite the first surface;
• a photodiode region group comprising a plurality of photodiode regions arranged in a 2N×2N matrix (where N is a positive integer) in plan view, each of the plurality of photodiode regions comprising a photodiode;
• a first deep isolation pattern provided within the substrate and surrounding the photodiode region group;
• a plurality of second deep isolation patterns provided within the substrate to separate each of the plurality of photodiode regions from each other;
• a plurality of connection regions that are connected to the plurality of photodiode regions and are provided between the plurality of second deep isolation patterns spaced apart from each other, each of the plurality of connection regions comprising a doped isolation region and an additional doped isolation region;
• a shallow isolation pattern filling a shallow trench recessed from the first surface of the substrate;
• and
• a shared ground region provided in one of the plurality of connection regions,
• wherein the shared ground region is provided within a connection region, among the plurality of connection regions, provided at a center of the photodiode region group, and is provided between the first surface of the substrate and the doped isolation region,
• wherein a portion of the shallow isolation pattern is provided on the doped isolation region within at least one other of the plurality of connection regions,
• wherein the doped isolation regions and the shared ground region are doped with impurities having a same conductivity type, and
• wherein an impurity concentration of the shared ground region is higher than an impurity concentration of the doped isolation regions.