Semiconductor device and method for forming the same

A semiconductor device, comprising

• a substrate;
• a semiconductor fin extending along the substrate in a first direction;
• a gate structure extending across the semiconductor fin along a second direction;
• an interlayer dielectric layer disposed over the substrate;
• a source structure on the semiconductor fin and in the interlayer dielectric layer;
• a drain structure on the semiconductor fin and in the interlayer dielectric layer, wherein the source and drain structures are respectively on opposite sides of the gate structure;
• a source contact extending through the interlayer dielectric layer and landing on the source structure;
• a first dielectric layer disposed around a sidewall of the source contact and between the sidewall of the source contact and the interlayer dielectric layer;
• a drain contact extending through the interlayer dielectric layer and landing on the drain structure;
• and
• a second dielectric layer disposed around a sidewall of the drain contact and between the sidewall of the drain contact and the interlayer dielectric layer;
• wherein the source contact and the drain contact have different lengths along the second direction, and have different profiles in a plan view.